The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2012
Filed:
Jul. 10, 2009
Kwang-seok Kim, Seongnam-si, KR;
Sun-ae Seo, Hwaseong-si, KR;
Kee-won Kim, Suwon-si, KR;
In-jun Hwang, Yongin-si, KR;
Hyung-soon Shin, Seoul, KR;
Seung-yeon Lee, Seoul, KR;
Seung-jun Lee, Seoul, KR;
Kwang-seok Kim, Seongnam-si, KR;
Sun-ae Seo, Hwaseong-si, KR;
Kee-won Kim, Suwon-si, KR;
In-jun Hwang, Yongin-si, KR;
Hyung-soon Shin, Seoul, KR;
Seung-yeon Lee, Seoul, KR;
Seung-jun Lee, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Provided is a method of operating a magnetic random access memory device comprising a switch structure and a magnetoresistance structure. According to the method, current variation depending on the direction of the current can be reduced by controlling a gate voltage of the switch structure when supplying current to write data to the magnetoresistance structure.