The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 27, 2012

Filed:

Feb. 24, 2010
Applicants:

Hyeon Seok Hwang, Seoul, KR;

Yoo Sam NA, Seoul, KR;

Moon Suk Jeong, Gyunggi-do, KR;

Gyu Suck Kim, Seoul, KR;

Byeong Hak JO, Gyunggi-do, KR;

Inventors:

Hyeon Seok Hwang, Seoul, KR;

Yoo Sam Na, Seoul, KR;

Moon Suk Jeong, Gyunggi-do, KR;

Gyu Suck Kim, Seoul, KR;

Byeong Hak Jo, Gyunggi-do, KR;

Assignee:

Samsung Electro-Mechanics Co., Ltd, Suwon, Gyunggi-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 1/52 (2006.01); H03F 1/22 (2006.01);
U.S. Cl.
CPC ...
Abstract

Disclosed herein is a power amplifier. The power amplifier includes a first common source transistor for amplifying an input signal into a predetermined level, a second common source transistor for compensating for input capacitance and performing auxiliary amplification for the first common source transistor, and a common gate transistor connected to the first common source transistor in a cascode structure, configured to be connected in parallel to the second common source transistor and prevent the first common source transistor from breaking down, and configured to output a signal amplified by a value obtained by adding the gain of the first common source transistor and the gain of the second common source transistor to each other.


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