The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2012
Filed:
Nov. 16, 2009
Applicants:
Lee-mi DO, Dajeon, KR;
Kyu-ha Baek, Dajeon, KR;
Inventors:
Lee-Mi Do, Dajeon, KR;
Kyu-Ha Baek, Dajeon, KR;
Assignee:
Electronics and Telecommunications Research Institute, Daejeon, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01);
U.S. Cl.
CPC ...
Abstract
Provided is a self aligned filed effect transistor structure. The self aligned field effect transistor structure includes: an active region on a substrate; a U-shaped gate insulation pattern on the active region; and a gate electrode self-aligned by the gate insulation pattern and disposed in an inner space of the gate insulation pattern.