The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2012
Filed:
Mar. 23, 2007
Naoki Fukunaga, Munakata, JP;
Hiroshi Osawa, Chiba, JP;
Naoki Fukunaga, Munakata, JP;
Hiroshi Osawa, Chiba, JP;
Showa Denko K.K., Tokyo, JP;
Abstract
The present invention provides a gallium nitride compound semiconductor light-emitting device that prevents an increase in the specific resistance of a p-type semiconductor layer due to hydrogen annealing and reduces the specific resistance of a translucent conductive oxide film to lower a driving voltage Vf, a method of manufacturing the same, and a lamp including the same. The method of manufacturing the gallium nitride compound semiconductor light-emitting device includes: forming a positive electrodecomposed of a translucent conductive oxide film on a p-type GaN layerof a gallium nitride compound semiconductor device; and a hydrogen annealing process of annealing the positive electrodein a gas atmosphere including hydrogen (H).