The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2012
Filed:
Aug. 31, 2010
Applicants:
Young-suk Choi, Tama, JP;
Koji Tsunekawa, Hachioji, JP;
Inventors:
Young-suk Choi, Tama, JP;
Koji Tsunekawa, Hachioji, JP;
Assignee:
Canon Anelva Corporation, Kanagawa-ken, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A phase-change memory element includes a perovskite layer formed by a material having a perovskite structure, and a phase-change recording material layer which is formed on the perovskite layer, and changes the phase to a crystal state or amorphous state when supplied with an electric current via the perovskite layer.
Choi, Young-suk. (2012). Phase-change memory element, phase-change memory cell, vacuum processing apparatus, and phase-change memory element manufacturing method (U.S. Patent No. 8143611). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8143611
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile