The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2012
Filed:
Jun. 28, 2006
Chih-hung Chiou, Hsinchu, TW;
Pei-hsuan Wu, Hsinchu, TW;
Shang-fu Chen, Hsinchu, TW;
I-liang Chen, Hsinchu, TW;
Jung-tsung Hsu, Hsinchu, TW;
Andrew-yen C. Tzeng, Taoyuan, TW;
Chih-hung Wu, Taoyuan, TW;
Chih-Hung Chiou, Hsinchu, TW;
Pei-Hsuan Wu, Hsinchu, TW;
Shang-Fu Chen, Hsinchu, TW;
I-Liang Chen, Hsinchu, TW;
Jung-Tsung Hsu, Hsinchu, TW;
Andrew-Yen C. Tzeng, Taoyuan, TW;
Chih-Hung Wu, Taoyuan, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Atomic Energy Council—Institute of Nuclear Energy Research, Taoyuan, TW;
Abstract
A solar cell with a superlattice structure and a fabricating method thereof are provided, which includes fabricating a superlattice structure of GaAsN/GaInAs, GaAsN/GaSbAs, or GaAsN/GaInSbAs between a base and an emitter of a middle cell of a triple junction solar cell by a strain-compensation technology. The provided solar cell not only decreases crystalline defects and increases the critical thickness of the crystal, but also makes the energy bandgap of GaAsN and GaInAs reach around the energy of 1.0 eV (electron volt). Hence, the absorption region can be raised to around the energy of 1.0 eV to enhance the efficiency of the solar cell.