The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2012
Filed:
Jun. 27, 2008
Chan Sun Hyun, Icheon-si, KR;
Chan Sun Hyun, Icheon-si, KR;
Hynix Semiconductor Inc., Icheon-si, KR;
Abstract
In a method of forming a contact plug of a semiconductor device, a nitride layer is prevented from being broken by forming a passivation layer over the nitride layer when contact holes are formed by etching an insulating layer between select lines formed over a semiconductor substrate. In an etch process of forming the contact plug, the passivation layer formed on sidewalls of the select lines is formed twice to protect the sidewalls of the select lines. Accordingly, the sidewalls of the select lines can be prevented from being damaged. Consequently, a process margin necessary to form a contact plug can be increased and, therefore, a smaller contact plug can be formed.