The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2012
Filed:
Jul. 15, 2009
Applicant:
Masashige Moritoki, Kanagawa, JP;
Inventor:
Masashige Moritoki, Kanagawa, JP;
Assignee:
Renesas Electronics Corporation, Kanagawa, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor deviceincludes: a silicon substrate; a first gateincluding a gate electrodeformed on the silicon substrateand sidewallsformed on the sidewalls of the gate electrode; a silicide layerformed lateral to the sidewallsof the first gateon a surface of the silicon substrate; and a contactwhich overlaps at least partially in plan view with the first gateand reaches to the silicide layerof the surface of the silicon substrate; wherein an insulator film is located between the contactand the gate electrodeof the first gate