The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 27, 2012

Filed:

Nov. 24, 2009
Applicants:

Giovanna Salzillo, Teverola, IT;

Maria Grazia Maglione, Torre del Greco, IT;

Anna Morra, Cercola, IT;

Luigi Occhipinti, Ragusa, IT;

Inventors:

Giovanna Salzillo, Teverola, IT;

Maria Grazia Maglione, Torre del Greco, IT;

Anna Morra, Cercola, IT;

Luigi Occhipinti, Ragusa, IT;

Assignee:

STMicroelectronics S.r.l., Agrate Brianza, IT;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 51/40 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method realizes a thin film organic electronic device integrated on a substrate and includes an organic material layer and an organic thin film transistor or OTFT transistor. The method comprises: depositing the organic material layer on the substrate, the organic material layer being a conductive organic polymer; patterning by a soft-lithographic procedure the organic material layer to create a reduced portion in order to make a channel area of the OTFT transistor; masking the organic material layer by covering with a cover mask a source area and a drain area of the OTFT transistor; irradiating by ultraviolet radiation to deactivate exposed portions of the organic material layer defining the source area, the drain area and the channel area; depositing on the organic material layer a semiconductor layer; and creating on the semiconductor layer a gate area of the OTFT transistor.


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