The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2012
Filed:
Mar. 08, 2011
Alessandra Lanzara, Piedmont, CA (US);
Andreas K. Schmid, Berkeley, CA (US);
Xiaozhu Yu, Berkeley, CA (US);
Choonkyu Hwang, Albany, CA (US);
Annemarie Kohl, Beneditkbeuern, DE;
Chris M. Jozwiak, Oakland, CA (US);
Alessandra Lanzara, Piedmont, CA (US);
Andreas K. Schmid, Berkeley, CA (US);
Xiaozhu Yu, Berkeley, CA (US);
Choonkyu Hwang, Albany, CA (US);
Annemarie Kohl, Beneditkbeuern, DE;
Chris M. Jozwiak, Oakland, CA (US);
The Regents of the University of California, Oakland, CA (US);
Abstract
A method is described herein for the providing of high quality graphene layers on silicon carbide wafers in a thermal process. With two wafers facing each other in close proximity, in a first vacuum heating stage, while maintained at a vacuum of around 10Torr, the wafer temperature is raised to about 1500° C., whereby silicon evaporates from the wafer leaving a carbon rich surface, the evaporated silicon trapped in the gap between the wafers, such that the higher vapor pressure of silicon above each of the wafers suppresses further silicon evaporation. As the temperature of the wafers is raised to about 1530° C. or more, the carbon atoms self assemble themselves into graphene.