The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2012
Filed:
Feb. 01, 2008
Yasunari Hosoi, Osaka, JP;
Yasunari Hosoi, Osaka, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A nonvolatile semiconductor memory device comprises a memory cell array composed of a plurality of memory cells each including a variable resistance element in which a resistance characteristic is changed by applying a voltage to the both ends, and information related to the resistance characteristic can be stored; a load circuit connected to one terminal of the variable resistance element in series; and a voltage generation circuit for applying a voltage to both ends of a series circuit. The variable resistance element selectively transits to one resistance characteristic selected from at least three different resistance characteristics when the voltage generated from the voltage generation circuit is applied under the transition condition set by changing any one or both of the load resistance characteristic of the load circuit and the voltage generation condition from the voltage generation circuit, and can store information having at least three values.