The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2012
Filed:
Sep. 23, 2009
Mitsue Takahashi, Tsukuba, JP;
Shigeki Sakai, Tsukuba, JP;
Shouyu Wang, Tsukuba, JP;
Ken Takeuchi, Yokohama, JP;
Mitsue Takahashi, Tsukuba, JP;
Shigeki Sakai, Tsukuba, JP;
Shouyu Wang, Tsukuba, JP;
Ken Takeuchi, Yokohama, JP;
Abstract
This invention has the purpose of providing a nonvolatile semiconductor storage device which is capable of entering multivalued storage in a FeFET unit without requiring preparation of a plurality of voltage sources. The nonvolatile semiconductor storage device is provided with multivalued ferroelectric memory cells which impart varied quantities of polarization to a ferroelectric material by applying pulse voltages having one and the same height and varied widths and consequently produce varied states of storage in conformity with the varied quantities of polarization.