High voltage generator in semiconductor memory

Abstract

A voltage generator is provided. The voltage generator includes a voltage pump and a voltage controller. The voltage pump generates a target voltage using a clock signal. The voltage controller compares a temporary voltage input from the voltage pump with a reference voltage to generate a control signal controlling the voltage pump. The voltage controller includes a string of a plurality of resistors connected in series to change a level of the temporary voltage to a voltage level of a corresponding comparison voltage. When the plurality of resistors are in a string, a resistance of a resistor closest to one end of the string is greater than resistances of other resistors of the string. The voltage controller may further include a jumping unit controlling connection or disconnection of two arbitrary nodes among first to n-th nodes (where n is a natural number) defined as connection points of the adjacent resistors of the string. Accordingly, the voltage generator can generate a voltage of with a more accurate level.