The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2012
Filed:
Mar. 31, 2009
Applicant:
Tomohiro Hamajima, Kanagawa, JP;
Inventor:
Tomohiro Hamajima, Kanagawa, JP;
Assignee:
Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/70 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device includes a semiconductor substrate, a first transistor including a first gate electrode, a first diffusion region, and a second diffusion region respectively formed above the semiconductor substrate, second transistor including a second gate electrode, the first diffusion region, and a third diffusion region respectively formed above the semiconductor substrate, and a node electrode formed above the first diffusion layer, and coupled thereto. The first gate electrode and the second gate electrode are formed separately at respective side walls of the node electrode.