The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2012
Filed:
Apr. 21, 2009
Koh Yoshikawa, Matsumoto, JP;
Akio Sugi, Matsumoto, JP;
Kouta Takahashi, Matsumoto, JP;
Manabu Takei, Shiojiri, JP;
Haruo Nakazawa, Matsumoto, JP;
Noriyuki Iwamuro, Matsumoto, JP;
Koh Yoshikawa, Matsumoto, JP;
Akio Sugi, Matsumoto, JP;
Kouta Takahashi, Matsumoto, JP;
Manabu Takei, Shiojiri, JP;
Haruo Nakazawa, Matsumoto, JP;
Noriyuki Iwamuro, Matsumoto, JP;
Fuji Electric Co., Ltd., , JP;
Abstract
A semiconductor device including an n-type semiconductor substrate, a p-type channel region and a junction layer provided between the n-type semiconductor substrate and the p-type channel region is disclosed. The junction layer has n-type drift regions and p-type partition regions alternately arranged in the direction in parallel with the principal surface of the n-type semiconductor substrate. The p-type partition region forming the junction layer is made to have a higher impurity concentration than the n-type drift region. This enables the semiconductor device to have an enhanced breakdown voltage and, at the same time, have a reduced on-resistance.