The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2012
Filed:
Jul. 28, 2009
Hiroyuki Tomomatsu, Oita-Ken, JP;
Yukihisa Hirotsugu, Tokyo, JP;
Hiroyuki Tomomatsu, Oita-Ken, JP;
Yukihisa Hirotsugu, Tokyo, JP;
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
The objective of this invention is to provide a semiconductor device containing a photodiode and having stable, high sensitivity with respect to short wavelength light near 405 nm, and a manufacturing method for said semiconductor device. PIN photodiode (C) has the following layers formed on silicon substrate (): p-type silicon region (), n-type silicon layer (), field oxide film (), silicon oxide film () that covers the surface of the active region, and silicon nitride film () that covers silicon oxide film (). Said field oxide film () contains extending portions () extending to the interior of the active region; the side portions of extending portions () are connected to silicon oxide film (), and the exposed surface portions of extending portions () become regions for hydrogen diffusion.