The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2012
Filed:
Mar. 03, 2010
Toru Koizumi, Yokohama, JP;
Shigetoshi Sugawa, Atsugi, JP;
Isamu Ueno, Hadano, JP;
Tesunobu Kochi, Hiratsuka, JP;
Katsuhito Sakurai, Tokyo, JP;
Hiroki Hiyama, Atsugi, JP;
Toru Koizumi, Yokohama, JP;
Shigetoshi Sugawa, Atsugi, JP;
Isamu Ueno, Hadano, JP;
Tesunobu Kochi, Hiratsuka, JP;
Katsuhito Sakurai, Tokyo, JP;
Hiroki Hiyama, Atsugi, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
A MOS-type solid-state image pickup device, on a semiconductor substrate, includes a photoelectric conversion unit having a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, and a transfer MOS transistor having a gate electrode disposed on an insulation film and transferring a charge carrier from a fourth semiconductor region. In addition, an amplifying MOS transistor having a gate electrode is connected to the fourth semiconductor region, and a fifth semiconductor region of the second conductivity type is continuously disposed to the second semiconductor region and under the gate electrode, and is disposed apart from the insulation film under the gate electrode of the transfer MOS transistor.