The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8138518 B1

PDF
Full Text
Expired
Date of Patent:
Mar. 20, 2012

Filed:

Apr. 07, 2009
Applicants:

Yao-jun Tsai, Taoyuan County, TW;

Jinn-kong Sheu, Tainan, TW;

Hsi-hsuan Yen, Taipei, TW;

Hung-lieh HU, Hsinchu, TW;

Inventors:

Yao-Jun Tsai, Taoyuan County, TW;

Jinn-Kong Sheu, Tainan, TW;

Hsi-Hsuan Yen, Taipei, TW;

Hung-Lieh Hu, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
Abstract

A light emitting diode (LED), a fabricating method thereof, and a package structure thereof are provided. The LED includes a substrate, a first semiconductor layer disposed on the substrate, an active layer disposed on the first semiconductor layer, a second semiconductor layer disposed on the active layer, a current distribution modifying layer, a first electrode and a second electrode. The active layer and the second semiconductor layer form a mesa structure and expose a part of the first semiconductor layer. The current distribution modifying layer is disposed on the second semiconductor layer. The first electrode is disposed on and electrically connected to the first semiconductor layer exposed by the mesa structure. The second electrode is disposed on the current distribution modifying layer and is electrically connected to the second semiconductor layer. The LED has superior light emitting efficiency.


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