The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2012
Filed:
Jan. 27, 2010
Ray-ming Lin, Taipei County, TW;
Jhong-hao Jiang, Taoyuan County, TW;
Bor-ren Fang, Taipei, TW;
Chang Gung University, Taoyuan County, TW;
Abstract
The present invention relates to a GaN series light-emitting diode structure, which includes a substrate; at least one GaN series layer formed over the substrate; subsequently an interface blocking structure composed of an n-type GaN series superlattice structure and a GaN series light-emitting layer, and a GaN series light-emitting layer are formed over the GaN series layer; and a p-type GaN series layer formed over the GaN series light-emitting layer. In the present invention, the radiative recombination efficiency is improved by introducing an interface blocking structure before the light-emitting layer under the epitaxial conditions of low temperature and pure nitrogen atmosphere.