The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 20, 2012

Filed:

Feb. 09, 2009
Applicants:

Junhee Choi, Seongnam-si, KR;

Jai Yong Han, Suwon-si, KR;

Andrei Zoulkarneev, Suwon-si, KR;

Inventors:

Junhee Choi, Seongnam-si, KR;

Jai Yong Han, Suwon-si, KR;

Andrei Zoulkarneev, Suwon-si, KR;

Assignees:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Samsung SDI Co., Ltd., Yongin-si, Gyunggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Disclosed are a relatively high-efficiency solar cell and a method for fabricating the same using a micro-heater array. The solar cell may include first and second micro-heaters intersecting each other or being parallel to each other on a substrate, and a plurality of InGaN p-n junction layers formed using the first and second micro-heaters. The solar cell has improved efficiency because sunlight with various wavelengths may be effectively absorbed by the plurality of InGaN p-n junction layers. Furthermore, relatively large-sized solar cells may be fabricated, because the plurality of InGaN p-n junction layers may be formed on a glass substrate using a micro-heater array.


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