The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2012
Filed:
Sep. 20, 2010
Atsunobu Isobayashi, Clifton Park, NY (US);
Masao Ishikawa, Malta, NY (US);
Atsunobu Isobayashi, Clifton Park, NY (US);
Masao Ishikawa, Malta, NY (US);
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
Methods for fabricating a device and related device structures are provided herein. According to one embodiment, a method for fabricating a device includes the acts of producing a substrate; forming a structure on the substrate having a lower dielectric layer, a metal layer, an upper dielectric layer, a planarizing layer, and a layer of photoresist material; developing the photoresist material according to a mask pattern; etching the planarizing layer and the upper dielectric layer according to the mask pattern; removing the photoresist material and the planarizing layer upon etching of the planarizing layer and the upper dielectric layer; applying a selective metal growth or metal/organic film to respective exposed portions of the metal layer following etching of the upper dielectric layer, thereby obtaining an inverted mask pattern; and etching at least the metal layer and the lower dielectric layer according to the inverted mask pattern.