The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2012
Filed:
May. 13, 2009
Whee Won Cho, Cheongju-si, KR;
Nam Woo SO, Anyang-si, KR;
Cheol MO Jeong, Icheon-si, KR;
Eun Gyeong Jang, Legal Representative, Icheon-si, KR;
Jung Geun Kim, Seoul, KR;
Whee Won Cho, Cheongju-si, KR;
Nam Woo So, Anyang-si, KR;
Cheol Mo Jeong, Icheon-si, KR;
Eun Gyeong Jang, legal representative, Icheon-si, KR;
Jung Geun Kim, Seoul, KR;
Hynix Semiconductor Inc., Gyeonggi-do, KR;
Abstract
A flash memory device includes an isolation layer formed on an isolation region of a semiconductor substrate, a tunnel insulating layer formed on an active region of the semiconductor substrate, a first conductive layer formed over the tunnel insulating layer, a dielectric layer formed on the first conductive layer and the isolation layer, a first trench penetrating the dielectric layer on the isolation layer to separate parts of the dielectric layer, a second trench formed on the isolation layer and expanded from the first trench, and a second conductive layer formed over the dielectric layer to fill the first and second trenches.