The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 20, 2012

Filed:

Sep. 22, 2009
Applicants:

Kentaro Matsunaga, Tokyo, JP;

Hirokazu Kato, Wappingers Falls, NY (US);

Tomoya Oori, Kanagawa-ken, JP;

Inventors:

Kentaro Matsunaga, Tokyo, JP;

Hirokazu Kato, Wappingers Falls, NY (US);

Tomoya Oori, Kanagawa-ken, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device manufacturing method includes: forming a core pattern on a foundation film, the core pattern containing a material generating acid by light exposure; selectively exposing part of the core pattern except an longitudinal end portion; supplying a mask material onto the foundation film so as to cover the core pattern, the mask material being crosslinkable upon supply acid from the core pattern; etching back the mask material to expose an upper surface of the core pattern and remove a portion of the mask material formed on the end portion of the core pattern, thereby leaving a mask material side wall portion formed on a side wall of the core pattern; and removing the core pattern and processing the foundation film by using the mask material sidewall portion left on the foundation film as a mask.


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