The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2012
Filed:
Apr. 07, 2009
Applicant:
Ming-jang Lin, Hsinchu, TW;
Inventor:
Ming-Jang Lin, Hsinchu, TW;
Assignee:
inergy Technology Inc., Hsinchu County, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
Abstract
In the specification and drawing a super junction semiconductor device is disclosed. The super junction semiconductor device comprises a P-type layer, a Nsubstrate, a N-type layer, a silicon dioxide layer and a Player. The Nsubstrate is disposed under the P-type layer. The N-type layer is disposed on the N+ substrate. The silicon dioxide layer is disposed between the N-type layer and the P-type layer. The Player is disposed on the P-type layer and the N-type layer.
Lin, Ming-Jang. (2012). Super junction semiconductor device (U.S. Patent No. 8138047). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8138047
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile