The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2012
Filed:
Jun. 23, 2010
Yuusuke Sugawara, Yamanashi, JP;
Kazuo Nishi, Yamanashi, JP;
Tatsuya Arao, Kanagawa, JP;
Daiki Yamada, Kanagawa, JP;
Hidekazu Takahashi, Kanagawa, JP;
Naoto Kusumoto, Kanagawa, JP;
Yuusuke Sugawara, Yamanashi, JP;
Kazuo Nishi, Yamanashi, JP;
Tatsuya Arao, Kanagawa, JP;
Daiki Yamada, Kanagawa, JP;
Hidekazu Takahashi, Kanagawa, JP;
Naoto Kusumoto, Kanagawa, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Abstract
A manufacturing method of a photoelectric conversion device includes the following steps: forming a first electrode over a substrate; and, over the first electrode, forming a photoelectric conversion layer that includes a first conductive layer having one conductivity, a second semiconductor layer, and a third semiconductor layer having a conductivity opposite to the one conductivity of the second semiconductor layer over the first electrode. The manufacturing method further includes the step of removing a part of the second semiconductor layer and a part of the third semiconductor layer in a region of the photoelectric conversion layer so that the third semiconductor layer does not overlap the first electrode.