The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2012
Filed:
Nov. 19, 2009
Dong-uk Choi, Seongnam-si, KR;
Jung-dal Choi, Seoul, KR;
Choong-ho Lee, Yongin-si, KR;
Sung-hoi Hur, Seoul, KR;
Min-tai Yu, Seoul, KR;
Dong-uk Choi, Seongnam-si, KR;
Jung-dal Choi, Seoul, KR;
Choong-ho Lee, Yongin-si, KR;
Sung-hoi Hur, Seoul, KR;
Min-tai Yu, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A flash memory device includes a bulk region, first through nth memory cell transistors arranged in a row on the bulk region, first through nth word lines respectively connected to gates of the first through nth memory cell transistors, a first dummy cell transistor connected to the first memory cell transistor, a first dummy word line connected to a gate of the first dummy cell transistor, a first selection transistor connected to the first dummy cell transistor, a first selection line connected to a gate of the first selection transistor, and a voltage control unit connected to the first selection line, the voltage control unit being adapted to output to the first selection line a voltage lower than a voltage applied to the bulk region, in an erasing mode for erasing the first through nth memory cell transistors.