The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 13, 2012

Filed:

Feb. 19, 2008
Applicants:

Marlin Frederick, Cedar Park, TX (US);

David Paul Clark, Georgetown, TX (US);

Jean-luc Pelloie, Moirans, FR;

Yew Keong Chong, New Braunfels, TX (US);

Inventors:

Marlin Frederick, Cedar Park, TX (US);

David Paul Clark, Georgetown, TX (US);

Jean-Luc Pelloie, Moirans, FR;

Yew Keong Chong, New Braunfels, TX (US);

Assignee:

ARM Limited, Cambridge, GB;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01G 4/228 (2006.01);
U.S. Cl.
CPC ...
Abstract

A decoupling capacitor is disclosed that has an n-type portion and a p-type portion in a semiconductor. The decoupling capacitor is formed of an NFET transistor and a PFET transistor, the PFET transistor being substantially formed in the n-type portion and the NFET transistor being substantially formed in the p-type portion, a boundary between the n-type portion and the p-type portion being substantially straight. The transistors are arranged such that a source and drain of the PFET transistor are connected to a high voltage rail and a source and drain of the NFET transistor are connected to a low voltage rail.


Find Patent Forward Citations

Loading…