The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2012
Filed:
Jan. 22, 2010
Applicants:
Mitsuyuki Ashida, Yokohama, JP;
Mototsugu Hamada, Yokohama, JP;
Inventors:
Mitsuyuki Ashida, Yokohama, JP;
Mototsugu Hamada, Yokohama, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H03K 3/01 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device, has a main transistor that is a first-conductivity-type MOS transistor and has the drain connected to a first potential; a first switch circuit that is connected between the source of said main transistor and a second potential; a dummy transistor that is a first-conductivity-type MOS transistor whose source serves also as the source of said main transistor; and a second switch circuit that is connected between the drain of said dummy transistor and said first potential or said second potential.