The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2012
Filed:
Dec. 28, 2006
Sung Hee Park, Seoul, KR;
Sung Hee Park, Seoul, KR;
Dongbu Electronics Co., Ltd., Seoul, KR;
Abstract
Disclosed is a static random access memory (SRAM), which includes first and second access transistors composed of metal oxide semiconductor (MOS) transistors, first and second drive transistors composed of MOS transistors, and first and second p-channel thin film transistors (TFTs) used as pull-up devices. The SRAM includes a ground potential layer disposed as a common source of the first and second drive transistors, and formed by implanting a dopant into a semiconductor substrate, a power supply potential layer connected with sources of the first and second p-channel TFTs, and an insulating layer formed on the substrate and interposed between the ground potential layer and the power supply potential layer.