The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2012
Filed:
Mar. 18, 2009
Takayuki Toba, Yokohama, JP;
Takayuki Toba, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor memory device includes a memory cell transistor and a first MOS transistor. The memory cell transistor includes a first insulating film, a second insulating film, a control gate electrode, and a first diffusion layer. The first insulating film formed on the first active region. The second insulating film formed on the first insulating film. The control gate electrode formed so as to include a first metal film formed on the second insulating film and a first conductive film formed on the first metal film. The first MOS transistor includes a second conductive film, a second metal film, a third conductive film, and a second diffusion layer. The second conductive film formed on a second active region. The second metal film formed on the second conductive film. The third conductive film formed on a second metal film.