The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2012
Filed:
Feb. 23, 2009
Akira Okita, Yamato, JP;
Masanori Ogura, Atsugi, JP;
Seiichiro Sakai, Zama, JP;
Takanori Watanabe, Yamato, JP;
Akira Okita, Yamato, JP;
Masanori Ogura, Atsugi, JP;
Seiichiro Sakai, Zama, JP;
Takanori Watanabe, Yamato, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
To provide a solid-state image pickup apparatus with little or no difference in the dark currents between adjacent photoelectric conversion elements and providing a high sensitivity and a low dark current even in a high-speed readout operation. A wellis formed on a wafer, and semiconductor layersare formed in the well to constitute photodiodes. A well contactis formed between the semiconductor layers. Element isolation regionsare provided between the well contact and the semiconductor layers, and channel stop layersare provided under the element isolation regions. A conductive layeris provided on the element isolation region, and a side wallis provided on a side face of the conductive layer. A distance a between an end of the element isolation regionand the conductive layer, a width b of the side walland a device isolation width c satisfy a relation c>a≧b.