The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2012
Filed:
Dec. 19, 2006
Applicant:
Kazuki Nomoto, Kagoshima, JP;
Inventor:
Kazuki Nomoto, Kagoshima, JP;
Assignee:
Sony Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01);
U.S. Cl.
CPC ...
Abstract
A field-effect transistor includes a semi-insulating substrate, a source electrode, a drain electrode, a gate electrode, the electrodes being provided on the semi-insulating substrate, and a buried gate region which is provided under the gate electrode and in which an impurity is doped, wherein a concave slit is provided in the semi-insulating substrate, the slit being located between the gate electrode and the drain electrode and being adjacent to the buried gate region at the side of the drain electrode.
Quick Actions:
Nomoto, Kazuki. (2012). Field-effect transistor, semiconductor device including the field-effect transistor, and method of producing semiconductor device (U.S. Patent No. 8134182). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8134182
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile