The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 13, 2012

Filed:

Apr. 28, 2006
Applicants:

Jochen Kraft, Oberaich, AT;

Bernhard Löffler, Gleisdorf, AT;

Gerald Meinhardt, Graz, AT;

Inventors:

Jochen Kraft, Oberaich, AT;

Bernhard Löffler, Gleisdorf, AT;

Gerald Meinhardt, Graz, AT;

Assignee:

austriamicrosystems AG, Unterpremstätten, AT;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/036 (2006.01);
U.S. Cl.
CPC ...
Abstract

A photodiode in which a pn junction is formed between the doped region (DG) formed in the surface of a crystalline semiconductor substrate and a semiconductor layer (HS) deposited above said doped region. An additional doping (GD) is provided in the edge region of the doped zone, by means of which additional doping the pn junction is shifted deeper into the substrate (SU). With the greater distance of the pn junction from defects at phase boundaries that is achieved in this way, the dark current within the photodiode is reduced.


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