The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2012
Filed:
Jul. 27, 2006
Ryouichi Takeuchi, Chichibu, JP;
Takashi Udagawa, Chichibu, JP;
Ryouichi Takeuchi, Chichibu, JP;
Takashi Udagawa, Chichibu, JP;
Showa Denko K.K., Tokyo, JP;
Abstract
The present invention provides a light-emitting diode () including a substrate () made of a first conductive type silicon (Si) single crystal, a pn junction structured light-emitting section () composed of a III-group nitride semiconductor on the substrate, a first polarity ohmic electrode () for the first conductive type semiconductor provided on the light-emitting section () and a second polarity ohmic electrode () for a second conductive type semiconductor on the same side as the light-emitting section () with respect to the substrate (), wherein a second pn junction structure () is provided which is made up of a pn junction between the first conductive type semiconductor layer () and the second conductive type semiconductor layer () which is different from the pn junction structure of the light-emitting section ().