The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2012
Filed:
Oct. 13, 2004
Hiromitsu Sakai, Chiba, JP;
Mineo Okuyama, Chiba, JP;
Hiromitsu Sakai, Chiba, JP;
Mineo Okuyama, Chiba, JP;
Showa Denko K.K., Tokyo, JP;
Abstract
An object of the present invention is to provide a Group III nitride semiconductor element which comprises a thick AlGaN layer exhibiting high crystallinity and containing no cracks, and which does not include a thick GaN layer (which generally serves as a light-absorbing layer in an ultraviolet LED). The inventive Group III nitride semiconductor element comprises a substrate; a first nitride semiconductor layer composed of AlN which is provided on the substrate; a second nitride semiconductor layer composed of AlGaN (0≦x1≦0.1) which is provided on the first nitride semiconductor layer; and a third nitride semiconductor layer composed of AlGaN (0<x2<1 and x1+0.02≦x2) which is provided on the second nitride semiconductor layer.