The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2012
Filed:
Jan. 24, 2007
Godefridus Hurkx, Best, NL;
Prabhat Agarwal, Brussels, BE;
Godefridus Hurkx, Best, NL;
Prabhat Agarwal, Brussels, BE;
NXP B.V., Eindhoven, NL;
Abstract
The invention suggests a transistor () comprising a source () and a drain () as well as a barrier region () located between the source and the drain. The barrier region is separated from the source and the drain by intrinsic or lowly doped regions () of a semiconductor material. Potential barriers are formed at the interfaces of the barrier region and the intrinsic or lowly doped regions. A gate electrode () is provided in the vicinity of the potential barriers such that the effective height and/or width of the potential barriers can be modulated by applying an appropriate voltage to the gate electrode.