The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8133805 B1

PDF
Full Text
Expired
Date of Patent:
Mar. 13, 2012

Filed:

Sep. 29, 2009
Applicants:

Christos D. Dimitrakopoulos, Somers, NY (US);

Mark S. Chace, Beacon, NY (US);

Inventors:

Christos D. Dimitrakopoulos, Somers, NY (US);

Mark S. Chace, Beacon, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods for forming a dense dielectric layer over the surface of an opening in a porous inter-layer dielectric having an ultra-low dielectric constant are disclosed. The disclosure provides methods for exposing the sidewall surface and the bottom surface of the opening to a plurality of substantially parallel ultra-violet (UV) radiation rays to form a dense dielectric layer having a substantially uniform thickness over both the sidewall surface and the bottom surface.


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Dimitrakopoulos, Christos. (2012). Methods for forming dense dielectric layer over porous dielectrics (U.S. Patent No. 8133805). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8133805

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