The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2012
Filed:
Oct. 30, 2008
Teruhiko Kuramachi, Ashigarakami-gun, JP;
Tomoo Murakami, Ashigarakami-gun, JP;
Takeshi Senga, Minamiashigara, JP;
Jiro Tsukahara, Ashigarakami-gun, JP;
Teruhiko Kuramachi, Ashigarakami-gun, JP;
Tomoo Murakami, Ashigarakami-gun, JP;
Takeshi Senga, Minamiashigara, JP;
Jiro Tsukahara, Ashigarakami-gun, JP;
Fujifilm Corporation, Tokyo, JP;
Abstract
A silicon-nitrogen compound film according to the first aspect of the present invention is made of a material expressed by a compositional formula SiNOH, where 10≦(3x+2y)≦12, 3.4≦x≦4.0, 0≦y, 0≦z<2.0, the peak-area ratio of a first area of a first peak appearing near a wave number of 2150 cmin a Fourier-transform infrared absorption spectrum of the material and corresponding to a Si—H stretching vibration to a second area of a second peak appearing near a wave number of 810 cmin the Fourier-transform infrared absorption spectrum and corresponding to a Si—N stretching vibration is smaller than 0.2, and the silicon-nitrogen compound film has a thickness t (in nanometers) and a density d (g/cm) which satisfy the inequalities,1.9≦d≦2.5, and−700d+1930≦6t≦−700d+2530.