The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2012
Filed:
Jan. 15, 2010
Yoshihiko Asai, Kanagawa, JP;
Yoshihiko Asai, Kanagawa, JP;
Renesas Electronics Corporation, Kanagawa, JP;
Abstract
A semiconductor device has an interconnect structure that includes a main interconnection and a contact structure. Parameters contributing to parasitic capacitance and interconnect resistance of the interconnect structure include: main parameters including width/thickness of the main interconnection; and sub parameter. Variation of each parameter from a design value caused by manufacturing variability is represented within a predetermined range. A method of designing the semiconductor device includes: calculating the maximum capacitance value, the minimum capacitance value, the maximum resistance value and the minimum resistance value of the interconnect structure under a condition that respective variation amplitudes of the main parameters do not simultaneously take maximum values and variation of the sub parameter is fixed to a predetermined value; generating a CR-added netlist; and performing operation verification of the semiconductor device by using the CR-added netlist.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile