The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2012
Filed:
Aug. 11, 2011
Satoru Hanzawa, Hachioji, JP;
Hitoshi Kume, Musashino, JP;
Motoyasu Terao, Hinode, JP;
Tomonori Sekiguchi, Tama, JP;
Makoto Saen, Kodaira, JP;
Satoru Hanzawa, Hachioji, JP;
Hitoshi Kume, Musashino, JP;
Motoyasu Terao, Hinode, JP;
Tomonori Sekiguchi, Tama, JP;
Makoto Saen, Kodaira, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A highly reliable large capacity phase change memory module is realized. A semiconductor device according to the present invention includes a memory array having a structure in which a storage layer using a chalcogenide material and a memory cell constituted of a diode are stacked, and an initialization condition and a rewriting condition are changed in accordance with the layer where a selected memory cell is located. A current mirror circuit is selected in accordance with an operation, and at the same time, the initialization condition and the rewriting condition (here, reset condition) are changed in accordance with the operation by a control mechanism of the reset current in a voltage selection circuit and a current mirror circuit.