The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 06, 2012

Filed:

Jan. 28, 2009
Applicants:

Vinh N. Nguyen, Durham, NC (US);

Nan Marie Jokerst, Hillsborough, NC (US);

David R. Smith, Durham, NC (US);

Talmage Tyler, Ii, Holly Springs, NC (US);

Jungsang Kim, Chapel Hill, NC (US);

Serdar H. Yonak, Ann Arbor, MI (US);

Inventors:

Vinh N. Nguyen, Durham, NC (US);

Nan Marie Jokerst, Hillsborough, NC (US);

David R. Smith, Durham, NC (US);

Talmage Tyler, II, Holly Springs, NC (US);

Jungsang Kim, Chapel Hill, NC (US);

Serdar H. Yonak, Ann Arbor, MI (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Examples of the present invention include a metamaterial comprising a plurality of resonators disposed on a substrate, the substrate comprising a dielectric support layer and a relatively thin semiconductor layer, having a Schottky junction between at least one conducting resonator and the semiconductor layer. The properties of the resonator may be adjusted by modifying the physical extent of a depletion region associated with the Schottky junction.


Find Patent Forward Citations

Loading…