The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2012
Filed:
Jan. 22, 2010
Applicants:
Su-jin Park, Hwaseung-si, KR;
Joung-yeal Kim, Yongin-si, KR;
Bai-sun Kong, Suwon-si, KR;
Young-hyun Jun, Seoul, KR;
Inventors:
Su-Jin Park, Hwaseung-si, KR;
Joung-Yeal Kim, Yongin-si, KR;
Bai-Sun Kong, Suwon-si, KR;
Young-Hyun Jun, Seoul, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-Si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G05F 3/02 (2006.01);
U.S. Cl.
CPC ...
Abstract
A CMOS charge pump with improved latch-up immunity is provided. The CMOS charge pump includes a blocking transistor that disconnects first and second boost nodes from a bulk node in response to a blocking control signal, such that a bulk voltage can be maintained at a predetermined level or higher. The CMOS charge pump in a power-up period first precharges the bulk voltage before the main pump performs a boosting operation and prevents a latch-up phenomenon.