The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2012
Filed:
Jun. 19, 2008
Koichi Matsuno, Mie, JP;
Koichi Matsuno, Mie, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device including a semiconductor substrate; an element isolation region formed in the substrate including trenches formed at a first depth and being filled with an element isolation insulating film; an element forming region formed on the substrate and being surrounded by the trenches; a gate electrode formed along a first direction on the element forming region via a gate insulating film, the gate electrode extending over the element insulating film filled the trenches extending along a second direction; a source/drain region having a second depth less than the first depth formed in the element forming region beside the gate electrode and having an exposed surface exposed to a trench sidewall; wherein the upper surface of the element isolation insulating film exclusive of a portion underlying the gate electrode is located at a third depth greater than the second depth and less than the first depth.