Schottky diode with silicide anode and anode-encircling p-type doped region

Abstract

An integrated circuit includes a Schottky diode having a cathode defined by an n-type semiconductor region, an anode defined by a cobalt silicide region, and a p-type region laterally annularly encircling the cobalt silicide region. The resulting p-n junction forms a depletion region under the Schottky junction that reduces leakage current through the Schottky diodes in reverse bias operation. An n+-type contact region is laterally separated by the p-type region from the first silicide region and a second cobalt silicide region is formed in the n-type contact region. The silicided regions are defined by openings in a silicon blocking dielectric layer. Dielectric material is left over the p-type region. The p-type region may be formed simultaneously with source/drain regions of a PMOS transistor.