The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2012
Filed:
Dec. 02, 2008
Hitoshi Okamoto, Kanagawa, JP;
Hitoshi Okamoto, Kanagawa, JP;
Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;
Abstract
A first exemplary aspect of an exemplary embodiment of the present invention is a semiconductor integrated device comprising a semiconductor substrate, a first impurity layer of a first conductivity type formed in the semiconductor substrate, a second impurity layer of a second conductivity type formed on the first impurity layer, a first well of the first conductivity type formed on the second impurity layer and supplied with potential from the first impurity layer via an impurity region of the first conductivity type selectively formed in a part of the second impurity layer, and a second well of the second conductivity type formed on the second impurity layer and supplied with potential from the second impurity layer, wherein the impurity concentrations of the first impurity layer and the impurity region are higher than that of the first well, and the impurity concentration of the second impurity layer is higher than that of the second well.