The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2012
Filed:
Sep. 20, 2005
Martin Knaipp, Unterpremstätten, AT;
Martin Knaipp, Unterpremstätten, AT;
austriamicrosystems AG, Unterpremstätten, AT;
Abstract
A high-voltage transistor is provided with a well of a first conductivity type, which is arranged in a substrate () of a second conductivity type, with a source (), a drain (), and a gate electrode () above a channel region (KN, KP) formed between the source and the drain, wherein several staggered and nested wells () of the same conductivity type extend from the source () or the drain () into the substrate () and wherein the doping concentration (log c) of the wells essentially decreases and is smoothed from the substrate surface with increasing depth (T) and also laterally. In this way, field-strength increases and also unintentional breakdown are prevented. Furthermore, a production method is specified.