The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2012
Filed:
Feb. 07, 2008
Mikael T. Bjoerk, Adliswil, CH;
Siegfried F. Karg, Adliswil, CH;
Joachim Knoch, Obfelden, CH;
Heike E. Riel, Baech, CH;
Walter H. Riess, Thalwil, CH;
Heinz Schmid, Waedenswil, CH;
Mikael T. Bjoerk, Adliswil, CH;
Siegfried F. Karg, Adliswil, CH;
Joachim Knoch, Obfelden, CH;
Heike E. Riel, Baech, CH;
Walter H. Riess, Thalwil, CH;
Heinz Schmid, Waedenswil, CH;
International Business Machines Corporation, Armonk, NY (US);
Abstract
A MOS device includes first and second source/drains spaced apart relative to one another. A channel is formed in the device between the first and second source/drains. A gate is formed in the device between the first and second source/drains and proximate the channel, the gate being electrically isolated from the first and second source/drains and the channel. The gate is configured to control a conduction of the channel as a function of a potential applied to the gate. The MOS device further includes an energy filter formed between the first source/drain and the channel. The energy filter includes a superlattice structure wherein a mini-band is formed. The energy filter is operative to control an injection of carriers from the first source/drain into the channel. The energy filter, in combination with the first source/drain, is configured to produce an effective zero-Kelvin first source/drain.