The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2012
Filed:
Jul. 03, 2009
Masao Uchida, Hyogo, JP;
Masashi Hayashi, Osaka, JP;
Koichi Hashimoto, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A semiconductor device includes: a semiconductor layer including silicon carbide, which has been formed on a substrate; a semiconductor regionof a first conductivity type defined on the surface of the semiconductor layer; a semiconductor regionof a second conductivity type, which is defined on the surfaceof the semiconductor layer so as to surround the semiconductor regionof the first conductivity type; and a conductorwith a conductive surfacethat contacts with the semiconductor regionsandof the first and second conductivity types. On the surfaceof the semiconductor layer, the semiconductor regionof the first conductivity type has at least one first strip portionthat runs along a first axis i. The width Cof the semiconductor regionof the first conductivity type as measured along the first axis i is greater than the width Aof the conductive surfaceas measured along the first axis i. And the periphery of the conductive surfacecrosses the at least one first strip portion