The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8129718 B1

PDF
Full Text
Expired
Date of Patent:
Mar. 06, 2012

Filed:

Aug. 03, 2009
Applicants:

Ryo Hayashi, Yokohama, JP;

Hideyuki Omura, Tokyo, JP;

Hideya Kumomi, Tokyo, JP;

Yuzo Shigesato, Sagamihara, JP;

Inventors:

Ryo Hayashi, Yokohama, JP;

Hideyuki Omura, Tokyo, JP;

Hideya Kumomi, Tokyo, JP;

Yuzo Shigesato, Sagamihara, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
Abstract

There is provided an amorphous oxide semiconductor including hydrogen and at least one element of indium (In) and zinc (Zn), the amorphous oxide semiconductor containing one of hydrogen atoms and deuterium atoms of 1×10cmor more to 1×10cmor less, and a density of bonds between oxygen and hydrogen except bonds between excess oxygen (O) and hydrogen in the amorphous oxide semiconductor being 1×10cmor less.


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Hayashi, Ryo. (2012). Amorphous oxide semiconductor and thin film transistor using the same (U.S. Patent No. 8129718). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8129718

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