The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2012
Filed:
Aug. 12, 2008
Hansong Cheng, Allentown, PA (US);
Manchao Xiao, San Diego, CA (US);
Gauri Sankar Lal, Whitehall, PA (US);
Thomas Richard Gaffney, Carlsbad, CA (US);
Chenggang Zhou, Wuhan, CN;
Jinping Wu, Wuhan, CN;
Hansong Cheng, Allentown, PA (US);
Manchao Xiao, San Diego, CA (US);
Gauri Sankar Lal, Whitehall, PA (US);
Thomas Richard Gaffney, Carlsbad, CA (US);
Chenggang Zhou, Wuhan, CN;
Jinping Wu, Wuhan, CN;
Air Products and Chemicals, Inc., Allentown, PA (US);
Abstract
Aminosilane precursors for depositing silicon-containing films, and methods for depositing silicon-containing films from these aminosilane precursors, are described herein. In one embodiment, there is provided an aminosilane precursor for depositing silicon-containing film comprising the following formula (I):(RRN)SiR  (I)wherein substituents Rand Rare each independently chosen from an alkyl group comprising from 1 to 20 carbon atoms and an aryl group comprising from 6 to 30 carbon atoms, at least one of substituents Rand Rcomprises at least one electron withdrawing substituent chosen from F, Cl, Br, I, CN, NO, PO(OR), OR, SO, SO, SOR and wherein R in the at least one electron withdrawing substituent is chosen from an alkyl group or an aryl group, Ris chosen from H, an alkyl group, or an aryl group, and n is a number ranging from 1 to 4.